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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2706GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The PA2706GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain FEATURES * Low on-state resistance RDS(on)1 = 15 m MAX. (VGS = 10 V, ID = 5.5 A) RDS(on)2 = 22.5 m MAX. (VGS = 4.5 V, ID = 5.5 A) * Low Ciss: Ciss = 660 pF TYP. (VDS = 10 V, VGS = 0 V) * Small and surface mount package (Power SOP8) 1 4 5.37 MAX. +0.10 -0.05 6.0 0.3 4.4 0.8 1.8 MAX. 1.44 0.15 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 0.05 MIN. 0.5 0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 -0.05 0.12 M PA2706GR ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 EQUIVALENT CIRCUIT Drain VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 30 20 11 44 2.0 150 -55 to + 150 11 12.1 V V A A W C C A mJ Gate Body Diode Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 IAS EAS Gate Protection Diode Source Notes 1. PW 10 s, Duty Cycle 1% 2 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm 3. Starting Tch = 25C, VDD = 15 V, RG = 25 , L = 100 H, VGS = 20 0 V Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16236EJ1V0DS00 (1st edition) Date Published April 2003 NS CP(K) Printed in Japan 2003 PA2706GR ELECTRICAL CHARACTERISTICS (TA = 25C, All terminals are connected.) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 5.5 A VGS = 10 V, ID = 5.5 A VGS = 4.5 V, ID = 5.5 A VGS = 4.0 V, ID = 5.5 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V, ID = 5.5 A VGS = 10 V RG = 10 MIN. TYP. MAX. 10 10 UNIT A A V S 1.5 4.5 11 16 19 660 270 83 9 5 29 6 2.5 15 22.5 29 m m m pF pF pF ns ns ns ns nC nC nC V ns nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 15 V VGS = 5 V ID = 11 A IF = 11 A, VGS = 0 V IF = 11 A, VGS = 0 V di/dt = 100 A/s 7.1 2.1 3.1 0.84 25 17 Note Pulsed: PW 350 s, Duty Cycle 2% TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20 0 V 50 TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG VGS RL VDD VDS 90% 90% 10% 10% VGS Wave Form 0 10% VGS 90% BVDSS IAS ID VDD VDS VGS 0 VDS VDS Wave Form 0 td(on) ton = 1 s Duty Cycle 1% tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 RL VDD 2 Data Sheet G16236EJ1V0DS PA2706GR TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.8 PT - Total Power Dissipation - W 100 2.4 2 1.6 1.2 0.8 0.4 0 Mounted on ceramic substrate of 2 1200 mm x 2.2 mm 80 60 40 20 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 TA - Ambient Temperature - C TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse) PW = 100 s 1 ms ID - Drain Current - A ID(DC) 10 DC 1 RDS(on) Limited (at VGS = 10 V) 10 ms 100 ms Power Dissipation Limited 0.1 TA = 25C Single Pulse Mounted on ceramic substrate of 2 1200 mm x 2.2 mm 0.1 1 10 100 0.01 0.01 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 Rth(t) - Transient Thermal Resistance - C/W 100 Rth(ch-A) = 62.5C/W 10 1 Mounted on ceramic substrate of 2 1200 mm x 2.2 mm Single Pulse TA = 25C 0.1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16236EJ1V0DS 3 PA2706GR DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 Pulsed 45 40 VGS = 10 V 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 0.01 4.5 V 100 FORWARD TRANSFER CHARACTERISTICS VDS = 10 V Pulsed ID - Drain Current - A ID - Drain Current - A 10 TA = -55C 25C 75C 150C 4.0 V 1 0.1 0 1 2 3 4 5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3 100 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VDS = 10 V Pulsed VDS = 10 V ID = 1 mA VGS(off) - Gate Cut-off Voltage - V 2.5 2 10 1.5 TA = -55C 25C 75C 150C 1 1 0.5 0 - 50 0 50 100 150 0.1 0.01 0.1 1 10 100 Tch - Channel Temperature - C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - m 30 Pulsed 25 VGS = 4.0 V 4.5 V 15 10 V 10 RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 25 20 20 15 ID = 5.5 A 10 5 5 0 0.1 1 10 100 0 0 5 10 15 20 ID - Drain Current - A VGS - Gate to Source Voltage - V 4 Data Sheet G16236EJ1V0DS PA2706GR RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 40 Pulsed CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 Ciss, Coss, Crss - Capacitance - pF 35 30 25 20 15 10 V 10 5 0 - 50 VGS = 4.0 V 4.5 V Ciss Coss 100 Crss 0 50 100 150 VGS = 0 V f = 1 MHz 10 0.01 0.1 1 10 100 Tch - Channel Temperature - C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 1000 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 30 6 ID = 11 A 25 VDD = 24 V 15 V 6V 5 VDS - Drain to Source Voltage - V VDD = 15 V VGS = 10 V RG = 10 100 20 VGS 4 td(off) 10 td(on) tf tr 15 3 10 VDS 5 2 1 1 0.1 1 10 100 0 0 2 4 6 8 0 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 1000 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT trr - Reverse Recovery Time - ns Pulsed IF - Diode Forward Current - A VGS = 10 V 10 VGS = 0 V di/dt = 100 A/s 0V 100 1 10 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1 1 10 100 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A Data Sheet G16236EJ1V0DS 5 VGS - Gate to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns PA2706GR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 VDD = 15 V VGS = 20 0 V RG = 25 Starting Tch = 25C 120 SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 15 V VGS = 20 0 V RG = 25 IAS 11 A IAS - Single Avalanche Current - A 100 Energy Derating Factor - % 80 10 EAS = 12.1 mJ 60 40 20 1 0.00001 0 0.0001 0.001 0.01 25 50 75 100 125 150 L - Inductive Load - H Starting Tch - Starting Channel Temperature - C 6 Data Sheet G16236EJ1V0DS PA2706GR * The information in this document is current as of April, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. 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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 |
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